MB85RS4MLYPF-G-BCERE1

The Fujitsu MB85RS4MLYPF-G-BCERE1 non-volatile FRAM ferroelectric memory uses the industry standard serial peripheral interface SPI and its transmission protocol for bidirectional transmission, which can achieve a maximum operating speed of 20MHZ. And can read and write as fast as RAM, low power consumption: working power current 1.5 ma, micro standby current, data can be stored for 10 years after power failure, can be written at bus speed, no delay, no waiting time. When the data is moved into the chip, the next bus cycle can begin immediately without several rounds. Fujitsu ferroelectric memory enhances the high-speed data writing capabilities of ferroelectric technology with a high-speed SPI interface. It has a much higher number of read and write operations than other non-volatile memory, and can withstand more than one trillion read and write operations (and the newly developed MB85RS1MT, etc., increased to 10 trillion).

Fujitsu Semiconductor's FRAM features non-volatility, low power consumption, high write speed, high read/write durability, random access and so on. Fujitsu Semiconductor controls the entire FRAM production process to ensure high quality and stable supply of FRAM products. Since 1999, FRAM products have been continuously supplied for more than 15 years, providing many customers with highly reliable FRAM products. Because of its ability to achieve real-time data recording, reduce power consumption, improve data security and other advantages, FRAM is rapidly occupying the field of smart meters, water meters, gas meters, industrial control, industrial automation and medical electronics and other market areas, FUJITSU agent Mandu Technology to provide customers with diversified storage product solutions.

---512KX8 FRAM Memory---