Fujitsu's FRAM (Ferroelectric Random Access Memory) technology has secured its place in the field of storage technology with its unique advantages, distinct development characteristics, and continuous innovation. As a high-performance non-volatile memory, FRAM demonstrates exceptional performance in scenarios requiring frequent read/write operations, real-time data logging, and low-power operation, especially in key areas such as automotive electronics, power meters, and smart cards.
The core strengths of FRAM include high read-write endurance, with the ability to read and write up to 10^13 times, far exceeding traditional storage media; fast write capability, with write speeds as quick as 150 nanoseconds, tens of thousands of times faster than traditional EEPROM; low-power operation, with write power consumption extremely low, reducing power by 92% compared to EEPROM; and non-volatile characteristics, ensuring data remains unchanged even after power loss. These features together form FRAM's strong competitiveness in a variety of application scenarios.
Among Fujitsu's FRAM product series, the 4Mbit MB85RS4MLY chip has become a highlight. This chip has a storage capacity of 524,288 bytes × 8 bits and supports a maximum SPI interface of 50MHz, further enhancing data transfer efficiency. The outstanding performance of MB85RS4MLY is reflected in its wide operating temperature range (-40°C to +125°C), allowing it to maintain stable performance under extreme conditions. Additionally, its operating supply voltage range is 1.7V to 1.95V, with a maximum operating current of 3.5mA (at a 50MHz operating frequency), and a standby current as low as 340µA, demonstrating its excellent low-power characteristics.
It's particularly worth mentioning that the write power consumption of MB85RS4MLY is significantly lower than that of EEPROM, reducing write power consumption by 92%, which is particularly beneficial for applications that require frequent data writing, such as smart meters. Even at high temperatures of 125°C, the maximum operating current of MB85RS4MLY is only 4mA, showing its excellent high-temperature resistance. In power-down mode, the maximum current is further reduced to 30µA, further lowering the power consumption of devices when they are not in use.
Fujitsu, adhering to the concept of human-centric innovation, integrates three key value drivers - creativity, intelligence, and connectivity - into the development of FRAM products, providing customers with more intelligent and convenient solutions. The successful application of MB85RS4MLY not only demonstrates Fujitsu's excellent strength in technological innovation but also verifies the broad prospects of FRAM in industrial applications, automotive electronics, industrial control, and medical equipment.
In the selection of industrial storage solutions, Fujitsu's FRAM technology, particularly the MB85RS4MLY chip, is highly regarded for its outstanding performance, low energy consumption, high reliability, and wide operating temperature range. Fujitsu's FRAM technology is about to enter a new phase, and its key role in the future is indicated by the continuous evolution of technology and the comprehensive expansion of application fields.
About Mandu Technology
Shenzhen Mandu Technology Co., Ltd. has steadfastly centered its operations on the distribution of high-performance, high-quality, and highly reliable integrated circuit products. Its portfolio encompasses memory chips, differential crystal oscillators, and MCU microcontrollers, while progressively integrating analog signal chain products. The company prides itself on delivering comprehensive and cost-effective solutions to its customers. Its products find applications across a broad spectrum of industries, including but not limited to network communication, industrial control, robotics, medical equipment, personal health, and numerous other fields.
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