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EEPROM (Electrically Erasable Programmable Read-Only Memory)

EEPROM (Electrically Erasable Programmable Read-Only Memory) is a type of non-volatile semiconductor memory. It can be erased and rewritten electrically byte-by-byte without removing the chip from the circuit or requiring ultraviolet light exposure. Unlike flash memory, EEPROM supports individual byte read, erase and write operations, which brings higher flexibility for small-volume data storage. It retains stored data even when power is cut off. Typical applications include storing configuration parameters, calibration values, device IDs and user data in industrial controllers, sensors, consumer electronics and automotive modules. EEPROM features simple driving, stable performance, but limited total erase-write cycles and relatively high cost per bit compared with flash memory.

EEPROM

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M24C32-DFDW6TP I2C 32 TSSOP-8L 1.7-5.5 -40 to 85 Not yet
M24C32-DFMC6TP I2C 32 UFDFPN8 1.7-5.5 -40 to 85 Not yet
M24C32-DFMN6TP I2C 32 SO8 1.7-5.5 -40 to 85 Not yet
M24C32-DREDW8TP I2C 32 TSSOP-8L 1.7-5.5 -40 to 105 Not yet
M24C32-DREMF8TP I2C 32 WFDFPN8 1.7-5.5 -40 to 105 Not yet
M24C32-DREMN8TP I2C 32 SO8 1.7-5.5 -40 to 105 Not yet
M24C32-FDW6TP I2C 32 TSSOP-8L 1.7-5.5 -40 to 85 Not yet
M24C32-FMC6TP I2C 32 UFDFPN8 1.7-5.5 -40 to 85 Not yet
M24C32-FMH6TP I2C 32 DFN5 1.7-5.5 -40 to 85 Not yet
M24C32-FMN6TP I2C 32 SO8 1.7-5.5 -40 to 85 Not yet
M24C32-RDW6TP I2C 32 TSSOP-8L 1.8-5.5 -40 to 85 Not yet
M24C32-RMN6TP I2C 32 SO8 1.8-5.5 -40 to 85 Not yet
M24C32-WDW6TP I2C 32 TSSOP-8L 2.5-5.5 -40 to 85 Not yet
M24C32-WMN6TP I2C 32 SO8 2.5-5.5 -40 to 85 Not yet
M24C32-A125MF3TP I2C 32 DFN8 1.7-5.5 -40 to 125 Not yet
M24C32-A125MN3TP I2C 32 SO8 1.7-5.5 -40 to 125 Not yet
M24C32-A125DW3TP I2C 32 TSSOP-8L 1.7-5.5 -40 to 125 Not yet
M24C16-DFCU6TP I2C 16 WLCSP5 THIN 1.7-5.5 -40 to 85 Not yet
M24C16-DREDW8TP I2C 16 TSSOP-8L 1.7-5.5 -40 to 105 Not yet
M24C16-DREMF8TP I2C 16 WFDFPN8 1.7-5.5 -40 to 105 Not yet