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EEPROM (Electrically Erasable Programmable Read-Only Memory)

EEPROM (Electrically Erasable Programmable Read-Only Memory) is a type of non-volatile semiconductor memory. It can be erased and rewritten electrically byte-by-byte without removing the chip from the circuit or requiring ultraviolet light exposure. Unlike flash memory, EEPROM supports individual byte read, erase and write operations, which brings higher flexibility for small-volume data storage. It retains stored data even when power is cut off. Typical applications include storing configuration parameters, calibration values, device IDs and user data in industrial controllers, sensors, consumer electronics and automotive modules. EEPROM features simple driving, stable performance, but limited total erase-write cycles and relatively high cost per bit compared with flash memory.

EEPROM

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M24512-A125DW3TP I2C 512 TSSOP-8L 1.7-5.5 -40 to 125 Not yet
M24256-BFDW6TP I2C 256 TSSOP-8L 1.7-5.5 -40 to 85 Not yet
M24256-BFMC6TP I2C 256 UFDFPN8 1.7-5.5 -40 to 85 Not yet
M24256-BRDW6TP I2C 256 TSSOP-8L 1.8-5.5 -40 to 85 Not yet
M24256-BRMN6TP I2C 256 SO8 1.8-5.5 -40 to 85 Not yet
M24256-BWDW6TP I2C 256 TSSOP-8L 2.5-5.5 -40 to 85 Not yet
M24256-BWMN6TP I2C 256 SO8 2.5-5.5 -40 to 85 Not yet
M24256-DFCS6TP I2C 256 WLCSP5 1.7-5.5 -40 to 85 Not yet
M24256-DFDW6TP I2C 256 TSSOP-8L 1.7-5.5 -40 to 85 Not yet
M24256-DFMC6TP I2C 256 UFDFPN8 1.7-5.5 -40 to 85 Not yet
M24256-DFMN6TP I2C 256 SO8 1.7-5.5 -40 to 85 Not yet
M24256-DRDW6TP I2C 256 TSSOP-8L 1.8-5.5 -40 to 85 Not yet
M24256-DREDW8TP I2C 256 TSSOP-8L 1.7-5.5 -40 to 105 Not yet
M24256-DREMN8TP I2C 256 SO8 1.7-5.5 -40 to 105 Not yet
M24256E-FDW6TP I2C 256 TSSOP-8L 1.7-5.5 -40 to 85 Not yet
M24256E-FMH6TP I2C 256 DFN5 1.7-5.5 -40 to 85 Not yet
M24256E-FMN6TP I2C 256 SO8 1.7-5.5 -40 to 85 Not yet
M24256X-FCU6TP I2C 256 WLCSP5 THIN 1.7-5.5 -40 to 85 Not yet
M24256-A125MF3TP I2C 256 DFN8 1.7-5.5 -40 to 125 Not yet
M24256-A125MN3TP I2C 256 SO8 1.7-5.5 -40 to 125 Not yet