The Performance Leap of Micron's 3D NAND

Micron Technology, Inc. has achieved significant innovation in 3D NAND storage technology, with advantages reflected in the innovation of layer count, improvement of architecture, optimization of performance, extension of logic, increase of storage density, and enhancement of durability. Its 3D NAND technology, with innovative layer counts of 176 layers and 232 layers, demonstrates the company's technical strength in the field of storage. Moreover, the CMOS-under-array (CuA) architecture has improved both the size and performance of the chips. By utilizing TLC and QLC technologies, Micron's 3D NAND technology not only significantly increases storage density but also greatly reduces the latency of read and write operations. Micron's 3D NAND products, integrated with innovative tunnel diodes and data retention mechanisms, have effectively improved durability and data security.

In terms of energy efficiency and durability, Micron's 3D NAND technology has also made breakthroughs. The HBM3E solution introduced by Micron Technology has achieved industry-leading energy efficiency, reducing power consumption by about 30% compared to competitors, setting a new standard. In addition, the replacement gate architecture and charge trap technology used enhance product durability, making them suitable for high-load writing environments. The 232-layer NAND technology has increased storage density, allowing single-chip capacities to reach 2TB, with a package size slightly larger than one centimeter, capable of storing about two weeks of 4K video content, further consolidating Micron's industry-leading position in performance, capacity, and energy efficiency.

Micron Technology's 3D NAND flash memory technology plays a crucial role in several key application areas. In the mobile storage field, 5G phones, with the help of 176-layer NAND technology, have shortened application load times and faster multitasking. In data centers and cloud computing, 3D NAND technology, by increasing storage density and performance, accelerates data-intensive workloads, such as AI engines and big data analytics.

At the same time, 3D NAND technology also supports the rapid development of edge computing, bringing ultra-fast computing capabilities with AI inference features and enhancements. In the automotive industry, Micron's 3D NAND technology meets the high durability and high storage density requirements, suitable for autonomous driving assistance systems and in-vehicle infotainment systems, maintaining optimal performance under extreme temperature conditions.

The consumer market has experienced higher storage capacity and performance improvements through Crucial brand consumer SSD products. The introduction of 3D NAND technology has driven the development of all-flash storage solutions in the enterprise market, ensuring high-speed data access and processing. In addition, 3D NAND technology is also an important cornerstone supporting compute-intensive applications such as AI and machine learning, accelerating the development and practical application of these cutting-edge technologies. Through these innovations, Micron Technology is promoting the widespread application and progress of storage technology in various fields.

About Mandu Technology

Shenzhen Mandu Technology Co., Ltd. has steadfastly centered its operations on the distribution of high-performance, high-quality, and highly reliable integrated circuit products. Its portfolio encompasses memory chips, differential crystal oscillators, and MCU microcontrollers, while progressively integrating analog signal chain products. The company prides itself on delivering comprehensive and cost-effective solutions to its customers. Its products find applications across a broad spectrum of industries, including but not limited to network communication, industrial control, robotics, medical equipment, personal health, and numerous other fields.

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