Fujitsu's FRAM memory stands out in the memory market with its exceptional read-write endurance and fast access speed. The read-write cycle of FRAM memory can reach 10 trillion times, far exceeding the lifespan of traditional memory, while its writing speed only takes 150 nanoseconds and has very low power consumption. These characteristics make FRAM very suitable for applications with strict requirements on speed and energy consumption.
The MB85RS64T is a Ferroelectric Random Access Memory (FRAM) launched by Fujitsu, with a storage capacity of 64 Kbit, organized as 8,192 words x 8 bits. This chip uses the SPI interface, supports mode 0 and mode 3, and the maximum operating frequency can reach 10 MHz. The read-write endurance of MB85RS64T is extremely high, with each byte capable of withstanding up to 10^13 read-write operations, and the data retention time is at least 10 years at +85°C. The operating voltage range is 1.8 V to 3.6 V, supporting low-power operation, with a maximum current of 0.8 mA during operation (at 10 MHz), and a typical standby current of 9 μA, making it suitable for battery-powered devices. In addition, MB85RS64T can operate in a temperature range of -40°C to +85°C, and is available in 8-pin plastic SOP and SON packages, both of which comply with the RoHS standard.
The advantage of MB85RS64T lies in its non-volatile storage characteristics, which can retain data even in the event of a power outage, providing faster write speeds and higher read-write endurance than SRAM. Compared with Flash memory or EEPROM, the writing process of FRAM does not require waiting time, making it excellent in applications that need to update data frequently. Its low-power characteristics and wide operating temperature range also make it adaptable to various environmental conditions.
In the field of smart meters, MB85RS64T is widely used. It can be used to store the settings, configurations, and status data of meters, ensuring the safe storage of data even in the event of a power outage. Its high-speed writing characteristic helps to achieve real-time updates of meter data, and high read-write endurance is the most important factor to ensure long-term stable operation. The low-power characteristic of FRAM is also suitable for battery-powered devices like meters, helping to extend battery life.
In the field of industrial control, MB85RS64T also plays an important role. It can be used to store and update key information such as device operating parameters, fault records, and maintenance logs. The non-volatility of FRAM ensures that key data will not be lost in the event of an unexpected power outage, while the high-speed read-write capability supports fast data recording and processing. In addition, the wide operating temperature range of FRAM allows it to adapt to various environmental conditions on the industrial site.
In summary, the high read-write endurance, high-speed writing ability, low-power characteristics, and wide operating temperature range of MB85RS64T make it particularly suitable for the storage needs of smart meters and industrial control applications. Fujitsu has over 21 years of production experience in the FRAM field, with global shipments exceeding 3.7 billion pieces. This achievement not only proves the market recognition of FRAM products but also demonstrates Fujitsu's technical strength and rich experience in this field.
About Mandu Technology
Shenzhen Mandu Technology Co., Ltd. has steadfastly centered its operations on the distribution of high-performance, high-quality, and highly reliable integrated circuit products. Its portfolio encompasses memory chips, differential crystal oscillators, and MCU microcontrollers, while progressively integrating analog signal chain products. The company prides itself on delivering comprehensive and cost-effective solutions to its customers. Its products find applications across a broad spectrum of industries, including but not limited to network communication, industrial control, robotics, medical equipment, personal health, and numerous other fields.
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